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P-CHANNEL 30V - 0.012 - 10A SO-8 STripFETTM II POWER MOSFET
Table 1: General Features
TYPE STS10PF30L

STS10PF30L
Figure 1:Package
RDS(on) <0.014 ID 10 A
VDSS 30V
TYPICAL RDS(on) = 0.012 STANDARDOUTLINEFOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance. APPLICATIONS BATTERY MANAGEMENT IN NOMADIC EQUIPMENT LOAD SWITCH
SO-8
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
SALES TYPE STS10PF30L MARKING S10PF30L PACKAGE SO-8 PACKAGING TAPE & REEL
Table 3: ABSOLUTE MAXIMUM RATING
Symbol VDS VDGR VGS ID ID IDM(*) Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Value 30 30 16 10 6 40 2.5 Unit V V V A A A W
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
May 2005
Rev. 2.0
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Table 4: THERMAL DATA
Rthj-amb Rthj-lead Tl Tstg
(*) Thermal
Resistance Junction-ambient Thermal Resistance Junction-leads Maximum Lead Temperature For Soldering Purpose storage temperature
Max Max Typ
47 16 150 -55 to 150
C/W C/W C C
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t bA10 sec.
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
Table 5: OFF
Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 16 V Min. 30 1 10 100 Typ. Max. Unit V A A nA
IGSS
Table 6: ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 4.5 V ID = 250 A ID = 5 A ID = 5 A Min. 1 0.012 0.015 0.014 0.018 Typ. Max. Unit V
Table 7: DYNAMIC
Symbol gfs Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 10 V ID = 5 A Min. Typ. 31 2300 750 115 Max. Unit S pF pF pF
VDS = 25V, f = 1 MHz, VGS = 0
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ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15 V ID = 5 A VGS = 4.5 V RG = 4.7 (Resistive Load, Figure 15) VDD= 15V ID= 10A VGS=4.5V (see test circuit, Figure 16) Min. Typ. 72 87 29 6.8 7.6 39 Max. Unit ns ns nC nC nC
Table 9: SWITCHING OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 15 V ID = 5 A VGS = 4.5 V RG = 4.7, (Resistive Load, Figure 15) Min. Typ. 89 27 Max. Unit ns ns
Table 10: SOURCE DRAIN DIODE
Symbol ISD ISDM VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 10 A VGS = 0 48.5 68 2.8 Test Conditions Min. Typ. Max. 10 40 1.2 Unit A A V ns nC A
ISD = 10 A di/dt = 100A/s Tj = 150C VDD = 15 V (see test circuit, Figure 17)
(*) Pulse width b 300 s, duty cycle 1.5 %. (*) Pulse width limited by TJMAX
Figure 3: Safe Operating Area
Figure 4: Thermal Impedance
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Figure 5: Output Characteristics Figure 6: Transfer Characteristics
Figure 7: Transconductance
Figure 8: Static Drain-source On Resistance
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Capacitance Variations
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Figure 11: Normalized Gate Threshold Voltage vs Temperature Figure 12: Normalized on Resistance vs Temperature
Figure 13: Source-drain Diode Forward Characteristics
Figure 14: Normalized Breakdown Voltage vs Temperature.
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Fig. 15: Switching Times Test Circuits For Resistive Load Fig. 16: Gate Charge test Circuit
Fig. 17: Test Circuit For Diode Recovery Behaviour
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SO-8 MECHANICAL DATA
DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019
0016023
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Table 11:Revision History
Date
May 2005
Revision
2.0 completed whit curves
Description of Changes
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners.
(c) 2005 STMicroelectronics - All Rights Reserved
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